High-Precision Wafer Resistivity Measurement via FEM-Corrected Four-Point Probing

Accurate resistivity measurement of semiconductor wafers with nonstandard geometries, such as notches and orientation flats, remains challenging, particularly near wafer edges where shape variations introduce significant systematic error. Standard JIS-based procedures are not designed to accommodate these local geometric deviations, limiting achievable accuracy in edge-proximal measurements.

We present a finite element method (FEM) simulation framework that models the four-point probe configuration and the wafer's actual edge geometry to compute a robust, high-resolution correction factor for measured resistance. The resulting FEM-derived correction enables precise and repeatable resistivity evaluation across wafers of varying shapes, including regions close to notches and cut edges.

In this talk, we describe the modeling methodology, validation through practical measurements, and representative application cases, and we briefly discuss the associated patent.