High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy

Scanning Nonlinear Dielectric Microscopy was developed as a microscope to visualize ferroelectric polarization distribution. Since nonlinear dielectric phenomena in dielectrics are extremely small, SNDM was designed from the outset with world-leading sensitivity capable of detecting capacitance changes as small as 10⁻²² F/√Hz, making it highly effective for semiconductor measurements as well.

The lecture will briefly outline the measurement principle before focusing on MOS interface analysis and carrier distribution observation in atomic-layer semiconductors to explain the latest research findings.